RECOMBINATION AT CLEAN AND DECORATED MISFIT DISLOCATIONS

被引：48

作者：

RADZIMSKI, ZJ ^{[1
]}

ZHOU, TQ ^{[1
]}

BUCZKOWSKI, A ^{[1
]}

ROZGONYI, GA ^{[1
]}

FINN, D ^{[1
]}

HELLWIG, LG ^{[1
]}

ROSS, JA ^{[1
]}

机构：

[1] MEMC ELECT MAT INC,ST PETERS,MO 63376

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.106455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique in a scanning electron microscope. Clean dislocations formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at different temperatures from a backside evaporated layer. Differences in electrical activity are discussed in relation to the detection limits of electron beam induced current technique and energy levels anticipated for the clean or decorated dislocations.

引用

页码：1096 / 1098

页数：3

共 21 条

[1] COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS [J].