THE EFFECTS OF FLUORINE-ATOMS IN HIGH-DOSE ARSENIC OR PHOSPHORUS ION-IMPLANTED SILICON

The effects of an additional fluorine ion implantation into highly doped n-type silicon were studied. The additional F ion implantation technique reduced the diffusion enhancement of As and P, the growth of extrinsic defects, and dopant activation in n-type silicon. F atoms were observed at the region where a high concentration of group V dopants existed. From these observations, we propose that F atoms are trapped by group V dopants in n-type silicon due to the high electronegativity of F atoms. F atoms prevent As+-SiI− and P+-SiI− pairs from forming, the formation and dissociation of which cause diffusion enhancement and extended defects. © 1990, The Electrochemical Society, Inc. All rights reserved.