COSI2 AND SI EPITAXIAL-GROWTH IN (111) SI SUB-MICRON LINES WITH APPLICATION TO A PERMEABLE BASE TRANSISTOR

被引：14

作者：

GLASTRE, G

ROSENCHER, E

DAVITAYA, FA

PUISSANT, C

PONS, M

VINCENT, G

PFISTER, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：898 / 900

页数：3

共 14 条

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].

BOZLER, CO ;

ALLEY, GD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141

[3]

DANTERROCHES C, 1984, J MICROSC SPECT ELEC, V9, P147

[4] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR [J].

DAVITAYA, FA ;

CHROBOCZEK, JA ;

DANTERROCHES, C ;

GLASTRE, G ;

CAMPIDELLI, Y ;

ROSENCHER, E .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :463-469

[5] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J].

DHEURLE, FM ;

PETERSSON, CS .

THIN SOLID FILMS, 1985, 128 (3-4) :283-297

[6]

GLASTRE G, IN PRESS MICROELECTR

[7]

Hollis M. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P102

[8] SPE-COSI2 SUBMICROMETER LINES BY LIFT-OFF USING SELECTIVE REACTION AND ITS APPLICATION TO A PERMEABLE-BASE TRANSISTOR [J].

ISHIBASHI, K ;

FURUKAWA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :322-327

[9]

LAJZEROWICZ J, 1986, THESIS GRENOBLE

[10] TWO-DIMENSIONAL FINITE-ELEMENT SIMULATION OF A PERMEABLE-BASE TRANSISTOR [J].

MARTY, A ;

CLARAC, J ;

BAILBE, JP ;

REY, G .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01) :24-28

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