TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS OF GAAS GROWN DIRECTLY ON (100) SI SUBSTRATES

被引：3

作者：

ABEDIN, MN ^{[1
]}

SCHOWALTER, LJ ^{[1
]}

DAS, P ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, DEPT ELECT COMP & SYST ENGN, TROY, NY 12180 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4218 / 4222

页数：5

共 19 条

[1]

ABEDIN MN, IN PRESS SUPERLATT M

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[3] NONDESTRUCTIVE EVALUATION OF THE SEMICONDUCTOR INTERFACE STATES DENSITY USING THE TRANSVERSE ACOUSTOELECTRIC VOLTAGE [J].

DAVARI, B ;

AZAR, MT ;

LIU, T ;

DAS, P .

SOLID-STATE ELECTRONICS, 1986, 29 (01) :75-81

[4] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON [J].

DUNCAN, WM ;

LEE, JW ;

MATYI, RJ ;

LIU, HY .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2161-2164

[5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[6] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[8]

METZE AM, 1984, APPL PHYS LETT, V45, P2207

[9]

Nakanishi T., 1985, J CRYST GROWTH, V55, P4578

[10] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

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