A NEW TYPE OF MISFIT DISLOCATION MULTIPLICATION PROCESS IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：44

作者：

LEFEBVRE, A

HERBEAUX, C

BOUILLET, C

DIPERSIO, J

机构：

[1] Laboratoire de Structure et Propriétés de l’État Solide, Université des Sciences et Techniques de Lille Flandres-Artois, Villeneuve d’Ascq Cedex, 59655

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 01期

关键词：

D O I：

10.1080/09500839108206597

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new misfit dislocation multiplication process has been observed for the first time in In(x)Ga1-(x)As/GaAs strained-layer superlattices (with x < 0.20). Transmission electron microscopy reveals that this process is based on the occurrence of interactions between perpendicular 60-degrees misfit dislocations with identical Burgers vectors and cross-slip events on the resulting dislocation configurations. The last stage of the process involves the operation of Frank-Read sources that emit glissile dislocations into the {111} planes; parts of the half-loops which develop towards the superlattice are parallel to the interface and are then new misfit dislocations.

引用

页码：23 / 29

页数：7

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