SPUTTER-ETCHING OF HETEROGENEOUS SURFACES

被引：14

作者：

MAISSEL, LI

STANDLEY, CL

GREGOR, LV

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1972年 / 16卷 / 01期

关键词：

D O I：

10.1147/rd.161.0067

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：67 / &

共 11 条

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[4] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J].

JONES, RE ;

STANDLEY, CL ;

MAISSEL, LI .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4656-&

[5] APPLICATION OF RF DISCHARGES TO SPUTTERING [J].

KOENIG, HR ;

MAISSEL, LI .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :168-&

[6] RE-EMISSION OF SPUTTERED SIO2 DURING GROWTH AND ITS RELATION TO FILM QUALITY [J].

MAISSEL, LI ;

JONES, RE ;

STANDLEY, CL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :176-&

[7]

PLISKIN WA, 1967, PHYSICS THIN FILMS, V4

[8]

VOSSEN JL, 1968, RCA REV, V29, P149

[9]

VOSSEN JL, 1970, RCA REV, V31, P293

[10]

WEHNER GK, PRIVATE COMMUNICATIO

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