EFFECTS OF V/III SUPPLY RATIO ON IMPROVEMENT OF CRYSTAL QUALITY OF ZINCBLENDE GAN GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE

被引：10

作者：

KIKUCHI, A

HOSHI, H

KISHINO, K

机构：

[1] Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku, Tokyo, 102, 7-1, Kioi-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80069-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of the V/III supply ratio on the crystal quality of zincblende GaN grown on (001) GaAs substrates by gas source molecular beam epitaxy, using a 13.56 MHz RF-radical nitrogen source, was investigated. The surface morphology was drastically improved by optimizing the V/III ratio, resulting in a featureless smooth surface. The measured electron concentration increased with increasing the V/III supply ratio. This phenomenon is explained by the electrons originating from nitrogen vacancies being compensated by defects due to the poor crystal quality of GaN grown at lower V/III supply ratios.

引用

页码：897 / 901

页数：5

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