REAL-TIME THICKNESS CONTROL OF RESONANT-TUNNELING DIODE GROWTH BASED ON REFLECTION MASS-SPECTROMETRY

被引：8

作者：

CELII, FG

HARTON, TB

KAO, YC

MOISE, TS

机构：

[1] Corporate Research and Development/Technology, M/S 147, Texas Instruments, Dallas, TX 75265

[2] Department of Electrical and Computer Engineering, MS-366, Rice University, Houston

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used reflection mass spectrometry (REMS) to control the molecular beam epitaxial growth of resonant-tunneling diode (RTD) structures. The REMS-based thickness value controlled the effusion cell shutter actuation, and compensated in real time for flux transients and short-term flux drift. Use of REMS control during deposition of AlAs, InAs, and InGaAs layers resulted in improved symmetry and reproducibility of the RTD I-V characteristics, compared with time-based, dead-reckoning growth. REMS-based control for flux compensation during growth of GaAs/AlGaAs multi-quantum-well structures is also reported.© 1995 American Institute of Physics.

引用

页码：2555 / 2557

页数：3

共 13 条

[1] GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION [J].