CONTROL OF GROWTH TEMPERATURE AT THE ONSET OF IN0.53GA0.47AS GROWTH BY CHEMICAL BEAM EPITAXY

Compositional grading has been observed during the initial 0.25-mu-m of InGaAs growth on In-free mounted, radiatively heated InP wafers. This has been related to a temperature rise occurring during the growth. X-ray diffraction measurements and rocking curve simulations have quantified the compositional variations as a function of depth, enabling a temperature profile to be derived from the known variation of composition with growth temperature. Use of a temperature ramp to compensate for the modelled temperature changes has led to the growth of near-perfect InGaAs layers with negligible compositional grading.