RADIATION-ENHANCED DIFFUSION OF AU IN AMORPHOUS SI

被引：23

作者：

PRIOLO, F ^{[1
]}

POATE, JM ^{[1
]}

JACOBSON, DC ^{[1
]}

LINNROS, J ^{[1
]}

BATSTONE, JL ^{[1
]}

CAMPISANO, SU ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1213 / 1215

页数：3

共 12 条

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[9] DIFFUSION OF IMPLANTED IMPURITIES IN AMORPHOUS SI [J].

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[10] THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS-SILICON [J].

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