CHARGE TRAPPING IN OXIDE GROWN ON POLYCRYSTALLINE SILICON LAYERS

被引：9

作者：

AVNI, E

ABRAMSON, O

SONNENBLICK, Y

SHAPPIR, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 01期

关键词：

D O I：

10.1149/1.2095549

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：182 / 186

页数：5

共 28 条

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