RECOVERY BEHAVIOR OF SI(LI) JUNCTIONS AFTER GAMMA IRRADIATION

被引：2

作者：

AMMERLAA.CA

机构：

来源：

关键词：

D O I：

10.1063/1.1656108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6023 / &

共 21 条

AMMERLAAN, CAJ ;

MULDER, K .

NUCLEAR INSTRUMENTS & METHODS, 1963, 21 (01) :97-100

[2]

AMMERLAAN CAJ, 1967, THESIS U AMSTERDAM

[3]

AMMERLAAN CAJ, 1965, EFFETS RAYONNEMENTS, P295

[4] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

[5]

DEARNALEY G, 1964, SEMICONDUCTOR COUNTE

[6] THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT [J].

ELLIOTT, JH .

NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (01) :60-66

HROSTOWSKI, HJ ;

ALDER, BJ .

[8] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].

KAISER, W ;

KECK, PH ;

LANGE, CF .

PHYSICAL REVIEW, 1956, 101 (04) :1264-1268

[9]

KROGER FA, 1964, CHEMISTRY IMPERFECT, P271

MAYER, JW .