EFFECT OF SUBSTRATE OFF-ORIENTATION ON GAAS/CAF2/SI(111) STRUCTURE WITH ROTATIONAL TWIN

被引：16

作者：

MIZUKAMI, H

TSUTSUI, K

FURUKAWA, S

机构：

[1] Department of Applied Electronics, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12A期

关键词：

GAAS; CAF2; SI(111); EBE EPITAXY; OFF-ORIENTATION; SURFACE MORPHOLOGY; ELECTRON MOBILITY; ROTATIONAL TWIN;

D O I：

10.1143/JJAP.30.3349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of off-orientation of substrate was investigated to improve the surface morphology and crystallinity of CaF2/Si(111) and GaAs/CaF2/Si(111) structures which were grown by molecular beam epitaxy. It was found that drastic improvement of surface morphology of the CaF2 films and the GaAs films was observed by using Si(111) substrates off-oriented toward not [110] but the [001] direction. Hall measurements showed that electrical properties of the GaAs films were also improved by using these substrates. This report pointed out that selection of the direction toward which the substrate is off-oriented is very important for growth of the GaAs/CaF2/Si(111) structure which has a rotational twin, the so-called "type-B" epitaxial relation.

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收藏

页码：3349 / 3354

页数：6

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