DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES

被引：3

作者：

LEE, HC ^{[1
]}

ISHIWARA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

SAIKI, K ^{[1
]}

KOMA, A ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT CHEM,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90121-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the effect of CaF2 surface modification by electron beam (e-beam) exposure in order to clarify the growth mechanism of the EBE-epitaxy (electron-beam exposure and epitaxy) for GaAs on CaF2/Si(111) structures. It is found that As atoms of the order of one monolayer are adsorbed on the surface of CaF2 films which have been exposed to an e-beam under As impingement. The electronic structure of the As-adsorbed surface of the CaF2 film is examined by electron energy loss spectroscopy. Distribution of these interfacial As atoms is also studied using Rutherford backscattering spectroscopy with a glancing angle geometry. © 1989.

引用

页码：553 / 558

页数：6

共 15 条

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