RAMAN-SCATTERING CHARACTERIZATION OF STRAIN IN GAAS HETEROEPITAXIAL FILMS GROWN ON SAPPHIRE AND SILICON-ON-SAPPHIRE SUBSTRATES

被引：10

作者：

HUMPHREYS, TP

POSTHILL, JB

DAS, K

SUKOW, CA

NEMANICH, RJ

PARIKH, NR

MAJEED, A

机构：

[1] RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA

[2] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27599 USA

[3] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

[4] BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.L1595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1595 / L1598

页数：4

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