GROWTH OF GAAS ON HIGH-TEMPERATURE HYDROGEN PRETREATED (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

HUMPHREYS, TP

DAS, K

POSTHILL, JB

TARN, JCL

JAING, BL

WORTMAN, JJ

PARIKH, NR

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 08期

关键词：

D O I：

10.1143/JJAP.27.1458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1458 / 1463

页数：6

共 49 条

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