HIGH MOBILITY GAAS/ALAS/SI(211) STRUCTURES GROWN BY MBE

被引：3

作者：

CHRISTOU, A

VARMAZIS, K

HATZOPOULOS, Z

机构：

[1] UNIV CRETE,DEPT PHYS,HERAKLIO,GREECE

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90396-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：226 / 230

页数：5

共 11 条

[1]

FISCHER R, 1984, P IEDM SAN FRANCISCO, P858

[2]

GALE RP, 1981, IEEE ELECTRON DEVICE, V2, P160

[3] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[4] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613

[5] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].

KROEMER, H ;

POLASKO, KJ ;

WRIGHT, SC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765

[6] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J].

MORIZANE, K .

JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) :249-254

[7]

SINODA Y, 1983, JAPAN J APPL PHYS, V22, P450

[8] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].

TSAUR, BY ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :535-536

[9] REDUCTION OF OXIDES ON SILICON BY HEATING IN A GALLIUM MOLECULAR-BEAM AT 800-DEGREES-C [J].

WRIGHT, S ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :210-211

[10]

WRIGHT SL, 1981, J VACUUM SCI TECHNOL, V19, P545

← 1 2 →