HETEROEPITAXIAL GROWTH AND CHARACTERIZATION OF GAAS ON SILICON-ON-SAPPHIRE AND SAPPHIRE SUBSTRATES

被引：19

作者：

HUMPHREYS, TP

MINER, CJ

POSTHILL, JB

DAS, K

SUMMERVILLE, MK

NEMANICH, RJ

SUKOW, CA

PARIKH, NR

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

[4] N CAROLINA STATE UNIV,DEPT PHYS & ASTRON,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期

关键词：

D O I：

10.1063/1.101303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1687 / 1689

页数：3

共 16 条

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