RESIDUAL DAMAGE TO AN ATOMICALLY CLEANED LOW-TEMPERATURE-ANNEALED SI (100) SURFACE

被引：19

作者：

YAMADA, I ^{[1
]}

MARTON, D ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOOM MOLECUULFYS,AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：563 / 564

页数：2

共 7 条

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SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[2]

CLARKE EN, 1961, P IRE, V49, P1292

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CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

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[4] SPUTTERING YIELDS OF METALS FOR AR+ AND NE+ IONS WITH ENERGIES FROM 50 TO 600 EV [J].

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WEHNER, GK .

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[5] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

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MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

[6] INFLUENCE OF DISTORTIONS ON APPARENT SURFACE RADIATION-DAMAGE CROSS-SECTIONS IN SI [J].

TROMP, RM ;

GARRETT, R ;

YAMADA, I ;

ROOSENDAAL, HE ;

SARIS, FW .

RADIATION EFFECTS LETTERS, 1979, 43 (06) :217-222

[7] EPITAXIAL REGROWTH OF NE-IMPLANTED AND KR-IMPLANTED AMORPHOUS SILICON [J].

WITTMER, M ;

ROTH, J ;

REVESZ, P ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5207-5212

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