GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE ON SI WITH LARGE PEAK TO VALLEY RATIO AT ROOM-TEMPERATURE

被引:15
作者
KAN, SC
MORKOC, H
YARIV, A
机构
关键词
D O I
10.1063/1.99546
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2250 / 2251
页数:2
相关论文
共 12 条
[1]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[2]   EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES [J].
CHEN, HZ ;
GHAFFARI, A ;
MORKOC, H ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1987, 51 (25) :2094-2096
[3]  
CHOI HK, 1984, IEEE ELECTRON DEVICE, V5, P205
[4]   MICROWAVE PROPERTIES OF SELF-ALIGNED GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SILICON SUBSTRATES [J].
FISCHER, R ;
KLEM, J ;
PENG, CK ;
GEDYMIN, JS ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :112-114
[5]   CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].
FISCHER, R ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
KOPP, W ;
MORKOC, H ;
LITTON, CW .
ELECTRONICS LETTERS, 1984, 20 (22) :945-947
[6]   ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].
HUANG, CI ;
PAULUS, MJ ;
BOZADA, CA ;
DUDLEY, SC ;
EVANS, KR ;
STUTZ, CE ;
JONES, RL ;
CHENEY, ME .
APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123
[7]   OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].
MASSELINK, WT ;
HENDERSON, T ;
KLEM, J ;
FISCHER, R ;
PEARAH, P ;
MORKOC, H ;
HAFICH, M ;
WANG, PD ;
ROBINSON, GY .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311
[8]   OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].
MORKOC, H ;
CHEN, J ;
REDDY, UK ;
HENDERSON, T ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72
[9]   STUDY OF HETEROEPITAXIAL INTERFACES BY ATOMIC RESOLUTION ELECTRON-MICROSCOPY [J].
OTSUKA, N ;
CHOI, C ;
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
FISCHER, R ;
PENG, CK ;
MORKOC, H ;
NAKAMURA, Y ;
NAGAKURA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :896-899
[10]   RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].
SOLLNER, TCLG ;
GOODHUE, WD ;
TANNENWALD, PE ;
PARKER, CD ;
PECK, DD .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590