GIANT VIBRATIONS OF IMPURITY ATOMS ON A CRYSTAL-SURFACE

被引:31
作者
MARTINEZ, RE
FONTES, E
GOLOVCHENKO, JA
PATEL, JR
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] ROWLAND INST SCI INC,CAMBRIDGE,MA 02142
关键词
D O I
10.1103/PhysRevLett.69.1061
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured extremely large anisotropic thermal vibrations of gallium adatoms on a Si(111) surface using x-ray standing waves. At 830 K the rms amplitude normal to the surface is 0.47 +/- 0.02 angstrom while the parallel amplitude is 0.30 +/- 0.02 angstrom. The temperature dependence of these amplitudes deviates significantly from that expected from Debye theory and suggests a significant thermal softening of the surface bonding at elevated temperatures.
引用
收藏
页码:1061 / 1064
页数:4
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共 20 条
[11]   ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY [J].
MO, YW ;
KLEINER, J ;
WEBB, MB ;
LAGALLY, MG .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1998-2001
[12]   STRUCTURE AND PHASES OF THE AU(001) SURFACE - X-RAY-SCATTERING MEASUREMENTS [J].
MOCHRIE, SGJ ;
ZEHNER, DM ;
OCKO, BM ;
GIBBS, D .
PHYSICAL REVIEW LETTERS, 1990, 64 (24) :2925-2928
[13]   ARSENIC ATOM LOCATION ON PASSIVATED SILICON (111) SURFACES [J].
PATEL, JR ;
GOLOVCHENKO, JA ;
FREELAND, PE ;
GOSSMANN, HJ .
PHYSICAL REVIEW B, 1987, 36 (14) :7715-7717
[14]   SURFACE-DIFFUSION OF HYDROGEN ON SI(111)7 X 7 [J].
REIDER, GA ;
HOFER, U ;
HEINZ, TF .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1994-1997
[15]   BINDING-SITES AND DIFFUSION-BARRIERS OF SINGLE-HEIGHT SI(001) STEPS [J].
ROLAND, C ;
GILMER, GH .
PHYSICAL REVIEW LETTERS, 1991, 67 (22) :3188-3191
[16]   COVERAGE AND CHEMICAL-DEPENDENCE OF ADSORBATE-INDUCED BOND WEAKENING IN METAL-SUBSTRATE SURFACES [J].
SETTE, F ;
HASHIZUME, T ;
COMIN, F ;
MACDOWELL, AA ;
CITRIN, PH .
PHYSICAL REVIEW LETTERS, 1988, 61 (12) :1384-1387
[17]   ABINITIO TOTAL-ENERGY CALCULATIONS FOR EXTREMELY LARGE SYSTEMS - APPLICATION TO THE TAKAYANAGI RECONSTRUCTION OF SI(111) [J].
STICH, I ;
PAYNE, MC ;
KINGSMITH, RD ;
LIN, JS ;
CLARKE, LJ .
PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1351-1354
[18]   ELECTRONIC-STRUCTURE, ATOMIC-STRUCTURE, AND THE PASSIVATED NATURE OF THE ARSENIC-TERMINATED SI(111) SURFACE [J].
UHRBERG, RIG ;
BRINGANS, RD ;
OLMSTEAD, MA ;
BACHRACH, RZ ;
NORTHRUP, JE .
PHYSICAL REVIEW B, 1987, 35 (08) :3945-3951
[19]   ORDER-DISORDER TRANSITIONS AT SURFACES [J].
VANDERVEEN, JF ;
FRENKEN, JWM .
SURFACE SCIENCE, 1991, 251 :1-5
[20]   X-RAY STANDING-WAVE AND TUNNELING-MICROSCOPE LOCATION OF GALLIUM ATOMS ON A SILICON SURFACE [J].
ZEGENHAGEN, J ;
PATEL, JR ;
FREELAND, P ;
CHEN, DM ;
GOLOVCHENKO, JA ;
BEDROSSIAN, P ;
NORTHRUP, JE .
PHYSICAL REVIEW B, 1989, 39 (02) :1298-1301