THE FORMATION OF AN AMORPHOUS SILICIDE BY THERMAL-REACTION OF SPUTTER-DEPOSITED TI AND SI LAYERS

被引：50

作者：

RAAIJMAKERS, IJMM

READER, AH

OOSTING, PH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2790 / 2795

页数：6

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