PHONON-SCATTERING AT GRAIN-BOUNDARIES IN HEAVILY DOPED FINE-GRAINED SILICON-GERMANIUM ALLOYS

被引：230

作者：

ROWE, DM

SHUKLA, VS

SAVVIDES, N

机构：

来源：

NATURE | 1981年 / 290卷 / 5809期

关键词：

D O I：

10.1038/290765a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：765 / 766

页数：2

共 13 条

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[7]

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[8] THEORETICAL OPTIMIZATION OF THERMOELECTRIC FIGURE OF MERIT OF HEAVILY DOPED HOT-PRESSED GERMANIUM-SILICON ALLOYS [J].

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[9] REVERSAL OF PRECIPITATION IN HEAVILY DOPED SILICON-GERMANIUM ALLOYS [J].

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[10]

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