FORMATION OF EPITAXIAL YTTRIUM AND ERBIUM SILICIDE ON SI(111) IN ULTRAHIGH-VACUUM

被引：35

作者：

SIEGAL, MP ^{[1
]}

KAATZ, FH ^{[1
]}

GRAHAM, WR ^{[1
]}

SANTIAGO, JJ ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

机构：

[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR SENSORS TECHNOL,PHILADELPHIA,PA 19104

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90532-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：162 / 170

页数：9

共 27 条

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APPLIED PHYSICS LETTERS, 1982, 40 (08) :684-686

[24] CONTROL OF EPITAXIAL ORIENTATION OF SI ON COSI2(111) [J].

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BATSTONE, JL .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1611-1613

[25]

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[26] GROWTH AND PROPERTIES OF EPITAXIAL SILICIDES ON SI(III) [J].

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[27]

11596 STAND XRAY DIF

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