GROWTH OF SINGLE-CRYSTAL EPITAXIAL SILICIDES ON SILICON BY THE USE OF TEMPLATE LAYERS

[1] Bean Jesse S, COMMUNICATION

[2] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[3] HARRISON TR, COMMUNICATION

[4] EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J]. THIN SOLID FILMS, 1980, 71 (01) : 117 - 127

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[6] SAITOH S, 1981, JPN J APPL PHYS, V20, P1649, DOI 10.1143/JJAP.20.1649

[7] Tu K. N., 1978, THIN FILMS INTERDIFF

[8] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

[9] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[10] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686

[1] Bean Jesse S, COMMUNICATION

[2] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[3] HARRISON TR, COMMUNICATION

[4] EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J]. THIN SOLID FILMS, 1980, 71 (01) : 117 - 127

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[6] SAITOH S, 1981, JPN J APPL PHYS, V20, P1649, DOI 10.1143/JJAP.20.1649

[7] Tu K. N., 1978, THIN FILMS INTERDIFF

[8] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

[9] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[10] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686