ANGSTROMS RESOLUTION IN SE-GE INORGANIC PHOTORESISTS

被引：22

作者：

YOSHIKAWA, A

HIROTA, S

OCHI, O

TAKEDA, A

MIZUSHIMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 02期

关键词：

D O I：

10.1143/JJAP.20.L81

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L81 / L83

页数：3

共 8 条

[1]

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[3]

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[6] NOVEL INORGANIC PHOTORESIST UTILIZING AG PHOTODOPING IN SE-GE GLASS-FILMS [J].

YOSHIKAWA, A ;

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[7] NEW INORGANIC ELECTRON RESIST OF HIGH CONTRAST [J].

YOSHIKAWA, A ;

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[8] DRY DEVELOPMENT OF SE-GE INORGANIC PHOTORESIST [J].

YOSHIKAWA, A ;

OCHI, O ;

MIZUSHIMA, Y .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :107-109

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