GROWTH OF CARBON-DOPED BASE GAAS/ALGAAS HBT BY GAS-SOURCE MBE USING TEG, TEA, TMG, ASH3, AND SI2H6

被引：6

作者：

ANDO, H

FUJII, T

SANDHU, A

TAKAHASHI, T

ISHIKAWA, H

OKAMOTO, N

YOKOYAMA, N

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01, 10-1, Morinosato-Wakamiya

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90395-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-performance carbon-doped-base GaAs/AlGaAs heterobipolar transistors (HBTs) were grown by gas-source MBE using only gaseous sources including dopant sources. The AlGaAs emitter layer was doped with Si from uncracked SI2H6 (n = 9 x 10(17) cm-3), and the base layer (92.5 nm) was doped with carbon from TMG (p = 4 x 10(19) cm-3). From SIMS analysis it was confirmed that a well-defined emitter-base junction with sharp carbon profile was obtained. The base-current ideality factor from the Gummel plot was 1.47, and the emitter-base junction ideality factor was 1.12. A high DC current gain of 53 was obtained at a current density of 4 x 10(4) A/CM2. The device characteristics of our carbon-doped HBTs were found to be stable under current stress.

引用

页码：228 / 233

页数：6

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