INSITU DOPING OF SILICON FILMS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION USING DISILANE AND PHOSPHINE

被引:23
作者
MADSEN, LD
WEAVER, L
机构
[1] Northern Telecom Electronics Limited, Ottawa
关键词
D O I
10.1149/1.2086921
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The low pressure chemical vapor deposition (LPCVD) of in situ doped silicon from disilane (Si2H6) and phosphine (PH3) was investigated using response surface methodology experimental design. TEM and associated analytical techniques were employed in characterizing films deposited over the range of 475°–700°C. Polycrystalline films with a resistivity of ~770 µΩ-cm after a 850°C, 30 min anneal with less than 5% thickness variation were deposited at approximately 60 Å-min−1 over 100 mm wafers. © 1990, The Electrochemical Society, Inc. All rights reserved.
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页码:2246 / 2251
页数:6
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