PHOSPHORUS-DOPED SILICON FILMS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF DISILANE AND PHOSPHINE

被引：10

作者：

AHMED, W

MEAKIN, DB

机构：

[1] GEC Research Ltd, Wembley, Engl, GEC Research Ltd, Wembley, Engl

来源：

THIN SOLID FILMS | 1987年 / 148卷 / 02期

关键词：

D O I：

10.1016/0040-6090(87)90162-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L63 / L65

页数：3

共 10 条

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[3]

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[4]

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NEUGEBAUER, G .

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[6] SOME RECENT TRENDS IN THE PREPARATION OF THIN-LAYERS BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HITCHMAN, ML ;

AHMED, W .

VACUUM, 1984, 34 (10-1) :979-986

[7]

JENSEN KF, 1985, 5TH P EUR C CVD UPPS, P144

[8] P-DOPED POLYSILICON FILM GROWTH TECHNOLOGY [J].

KUROKAWA, H .

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[9] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM [J].

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YU, ML .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2366-2368

[10] DEPOSITION OF PHOSPHORUS DOPED SILICON FILMS BY THERMAL-DECOMPOSITION OF DISILANE [J].

NAKAYAMA, S ;

YONEZAWA, H ;

MUROTA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (07) :L493-L495

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