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XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES
被引:46
作者
:
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
GRANT, RW
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
WALDROP, JR
KRAUT, EA
论文数:
0
引用数:
0
h-index:
0
KRAUT, EA
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1978年
/ 15卷
/ 04期
关键词
:
D O I
:
10.1116/1.569806
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1451 / 1455
页数:5
相关论文
共 31 条
[21]
MARINACE JC, 1960, IBM J, P280
[22]
Milnes A. G., 1972, HETEROJUNCTIONS META
[23]
GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE
PICKETT, WE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
PICKETT, WE
LOUIE, SG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
LOUIE, SG
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
PHYSICAL REVIEW LETTERS,
1977,
39
(02)
: 109
-
112
[24]
PICKETT WE, UNPUBLISHED
[25]
COMPOSITION, STRUCTURE, SURFACE-STATES, AND O-2 STICKING COEFFICIENT FOR DIFFERENTLY PREPARED GAAS(111)AS SURFACES
RANKE, W
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
RANKE, W
JACOBI, K
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
JACOBI, K
[J].
SURFACE SCIENCE,
1977,
63
(01)
: 33
-
44
[26]
PREPARATION OF GE/SI AND GE/GAAS HETEROJUNCTIONS
RIBEN, AR
论文数:
0
引用数:
0
h-index:
0
RIBEN, AR
FEUCHT, DL
论文数:
0
引用数:
0
h-index:
0
FEUCHT, DL
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 245
-
&
[27]
PREPARATION OF GE-GAAS HETEROJUNCTIONS BY VACUUM EVAPORATION
RYU, I
论文数:
0
引用数:
0
h-index:
0
RYU, I
TAKAHASHI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(11)
: 850
-
+
[28]
HETEROJUNCTION BAND DISCONTINUITIES
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
WAGNER, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
WAGNER, S
PHILLIPS, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
PHILLIPS, JC
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 31
-
33
[29]
STRATTON JA, 1941, ELECTROMAGNETIC THEO, P190
[30]
POTENTIAL PROFILING ACROSS SEMICONDUCTOR JUNCTIONS BY AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
WALDROP, JR
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
HARRIS, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5214
-
5217
←
1
2
3
4
→
共 31 条
[21]
MARINACE JC, 1960, IBM J, P280
[22]
Milnes A. G., 1972, HETEROJUNCTIONS META
[23]
GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE
PICKETT, WE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
PICKETT, WE
LOUIE, SG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
LOUIE, SG
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
PHYSICAL REVIEW LETTERS,
1977,
39
(02)
: 109
-
112
[24]
PICKETT WE, UNPUBLISHED
[25]
COMPOSITION, STRUCTURE, SURFACE-STATES, AND O-2 STICKING COEFFICIENT FOR DIFFERENTLY PREPARED GAAS(111)AS SURFACES
RANKE, W
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
RANKE, W
JACOBI, K
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
JACOBI, K
[J].
SURFACE SCIENCE,
1977,
63
(01)
: 33
-
44
[26]
PREPARATION OF GE/SI AND GE/GAAS HETEROJUNCTIONS
RIBEN, AR
论文数:
0
引用数:
0
h-index:
0
RIBEN, AR
FEUCHT, DL
论文数:
0
引用数:
0
h-index:
0
FEUCHT, DL
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 245
-
&
[27]
PREPARATION OF GE-GAAS HETEROJUNCTIONS BY VACUUM EVAPORATION
RYU, I
论文数:
0
引用数:
0
h-index:
0
RYU, I
TAKAHASHI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(11)
: 850
-
+
[28]
HETEROJUNCTION BAND DISCONTINUITIES
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
WAGNER, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
WAGNER, S
PHILLIPS, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
PHILLIPS, JC
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 31
-
33
[29]
STRATTON JA, 1941, ELECTROMAGNETIC THEO, P190
[30]
POTENTIAL PROFILING ACROSS SEMICONDUCTOR JUNCTIONS BY AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
WALDROP, JR
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
HARRIS, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
: 5214
-
5217
←
1
2
3
4
→