DISORDER EFFECTS ON OPTICAL-SPECTRA AND BAND-STRUCTURE OF SI INDUCED BY ION-IMPLANTATION

被引：20

作者：

HE, XF ^{[1
]}

JIANG, RR ^{[1
]}

CHEN, RX ^{[1
]}

MO, D ^{[1
]}

机构：

[1] ZHONGSHAN UNIV,INST MICROELECTR,GUANGZHOU 510275,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5261 / 5266

页数：6

共 52 条

[1] DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY [J].

ADAMS, JR ;

BASHARA, NM .

SURFACE SCIENCE, 1975, 49 (02) :441-458

[2] THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES [J].

ALLEN, PB ;

HEINE, V .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2305-2312

[3] SOLIDS WITH THERMAL OR STATIC DISORDER .1. ONE-ELECTRON PROPERTIES [J].

ALLEN, PB .

PHYSICAL REVIEW B, 1978, 18 (10) :5217-5224

[4]

Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[5] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA ;

KINSBRON, E .

PHYSICAL REVIEW B, 1984, 29 (02) :768-779

[6]

BALDO E, 1973, RADIAT EFF, V19, P771

[7]

BARANOVA EC, 1974, ION IMPLANTATION SEM, P59

[8]

BASSANI F, 1975, ELECTRONIC STATES OP

[9] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[10]

Bourgoin J. C., 1974, Radiation Effects, V22, P205, DOI 10.1080/10420157408230781

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