C-13 ISOTOPIC LABELING STUDIES OF GROWTH MECHANISMS IN THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS

被引：45

作者：

LUM, RM

KLINGERT, JK

KISKER, DW

ABYS, SM

STEVIE, FA

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90516-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：120 / 126

页数：7

共 29 条

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