CLEAN AND DAMAGE-FREE GAAS-SURFACES PREPARED BY ULTRASONIC RUNNING DEIONIZED WATER-TREATMENT

被引：10

作者：

HIROTA, Y

HOMMA, Y

SUGII, K

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90485-G

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaAs(001) surfaces treated with ultrasonic running deionized water (URDIW), after being etched by H2SO4 or NH4OH were examined by using X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). XPS analysis revealed that the arsenic and gallium oxides on chemically etched surfaces were completely removed by the URDIW treatment. RHEED observation indicated that the H2SO4-etched GaAs surface shows a streaky (2 X 1) surface reconstruction pattern at 360-degrees-C and that the NH4OH-etched surfaces show a (2 x 4) surface reconstruction pattern at 310-degrees-C. These experimental results indicate that chemically clean GaAs surfaces with little damage can be produced by URDIW treatment and that the stoichiometry of a URDIW treated surface can be controlled by varying the etching solutions.

引用

页码：619 / 624

页数：6

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