REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF GAAS SURFACE-PREPARED ULTRASONIC RUNNING DEIONIZED WATER-TREATMENT

被引：22

作者：

HIROTA, Y ^{[1
]}

HOMMA, Y ^{[1
]}

SUGII, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs (001) surface ultrasonically cleaned under running de-ionized water (U-RDIW) is investigated by reflection high-energy electron diffraction (RHEED). The RHEED observations of U-RDIW-treated surfaces show a spotty (1 X 1) pattern at room temperature and a (2 X 1) streaky surface reconstruction pattern at 360-degrees-C. The experimental results indicate that chemically clean and damage-free GaAs surfaces can be produced by U-RDIW treatment. We discuss surface structures before/after heating using a hydrogen-terminated model.

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页码：2794 / 2796

页数：3

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