CLEANING EFFECTS OF RUNNING DEIONIZED WATER ON A GAAS SURFACE

被引：22

作者：

HIROTA, Y ^{[1
]}

SUGII, K ^{[1
]}

HOMMA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, APPL ELECTR LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 03期

关键词：

D O I：

10.1149/1.2085678

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dissolution of arsenic and gallium oxides on GaAs surfaces during running deionized water (RDIW) treatment is investigated by x-ray photoelectron spectroscopy (XPS). RDIW treatment removes arsenic oxide more rapidly than gallium oxide. The addition of ultrasonic washing to the RDIW treatment accelerates the removal of both oxides, resulting in complete removal of both oxides from a GaAs surface within 1 h. As a result, this treatment is a promising method for the cleaning of GaAs substrate surfaces. The changes in oxide thickness during these treatments are clarified by assuming a double layer structure model.

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页码：799 / 802

页数：4

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