INSTABILITY PHENOMENA IN THIN INSULATING FILMS ON SILICON

[11] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 986 - &

[12] POLARIZATION OF THIN PHOSPHOSILICATE GLASS FILMS IN MGOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1922 - +

[13] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[14] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1454 - +

[15] GREGOR LV, 1966, MAY SPRING M EL SOC

[16] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[17] ON MECHANISM OF FORMATION OF THIN OXIDE LAYERS ON NICKEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 456 - &

[18] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[19] SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 291 - +

[20] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[11] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 986 - &

[12] POLARIZATION OF THIN PHOSPHOSILICATE GLASS FILMS IN MGOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1922 - +

[13] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[14] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1454 - +

[15] GREGOR LV, 1966, MAY SPRING M EL SOC

[16] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[17] ON MECHANISM OF FORMATION OF THIN OXIDE LAYERS ON NICKEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 456 - &

[18] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[19] SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 291 - +

[20] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +