INSTABILITY PHENOMENA IN THIN INSULATING FILMS ON SILICON

[31] DIELECTRIC LOSS AND CURRENT-VOLTAGE MEASUREMENTS IN SODIUM-CONTAMINATED SI-SIO2-CR STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 722 - 731

[32] KRIEGLER RJ, 1973, 5TH P C SOL STAT DEV

[33] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[34] LOGAN JS, 1965, JUN IEEE SOL STAT DE

[35] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[36] INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) : 180 - &

[37] NICOLLIAN EH, 1969, APPL PHYS LETT, V15, P774

[38] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &

[39] FUSED GLASS PENETRATION INTO THERMALLY GROWN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 620 - &

[40] PLISKIN WA, 1967, PHYS THIN FILMS, V4, P257

[31] DIELECTRIC LOSS AND CURRENT-VOLTAGE MEASUREMENTS IN SODIUM-CONTAMINATED SI-SIO2-CR STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 722 - 731

[32] KRIEGLER RJ, 1973, 5TH P C SOL STAT DEV

[33] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[34] LOGAN JS, 1965, JUN IEEE SOL STAT DE

[35] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[36] INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) : 180 - &

[37] NICOLLIAN EH, 1969, APPL PHYS LETT, V15, P774

[38] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &

[39] FUSED GLASS PENETRATION INTO THERMALLY GROWN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 620 - &

[40] PLISKIN WA, 1967, PHYS THIN FILMS, V4, P257