ION-IMPLANTATION MASKING ABILITY DEGRADATION IN HIGH-TEMPERATURE ANNEALED MO FILM

被引：3

作者：

NOZAKI, T

OKABAYASHI, H

HIGUCHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期

关键词：

D O I：

10.1143/JJAP.20.1121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1121 / 1127

页数：7

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共 17 条

[1] RANGE MEASUREMENTS IN ORIENTED TUNGSTEN SINGLE CRYSTALS (0.1-1.0 MEV) .I. ELECTRONIC AND NUCLEAR STOPPING POWERS
ERIKSSON, L
DAVIES, JA
JESPERSGAARD, P
[J]. PHYSICAL REVIEW, 1967, 161 (02): : 219 - +
[2] ISHIKAWA H, 1979, IEDM TECH DIGEST, P358
[3] HIGH-SPEED MOLYBDENUM GATE MOS RAM
KONDO, M
MANO, T
YANAGAWA, F
KIKUCHI, H
AMAZAWA, T
KIUCHI, K
IEDA, N
YOSHIMURA, H
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 611 - 616
[4] MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES
MOHSEN, AM
MORRIS, FJ
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 407 - 416
[5] NISHIMATSU S, 1971, OYO BUTURI S, V40, P29
[6] SUPPRESSION OF MOBILE ION RELATED INSTABILITY IN MO-GATE MOS STRUCTURES
NOZAKI, T
OKABAYASHI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 175 - 179
[7] OHGISHI T, 1978, IEEE J SOLID STATE C, V13, P355
[8] EFFECT OF HEAT-TREATMENT AFTER DEPOSITION ON INTERNAL-STRESS IN MOLYBDENUM FILMS ON SIO2-SI SUBSTRATES
OIKAWA, H
NAKAJIMA, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1153 - 1156
[9] Z2 DEPENDENCE OF ELECTRONIC STOPPING POWER OF LOW-VELOCITY CHANNELED HEAVY-IONS
PATHAK, AP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (18): : 3239 - 3244
[10] SAITOH K, 1977, T I ELECTRON COMMU C, V60, P523