WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS

[21] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[22] Kopylov A. A., 1975, Soviet Physics - Solid State, V16, P1200

[23] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499

[24] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[25] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[26] LANG DV, 1976, SEP P INT C RAD EFF

[27] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[28] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 1859 - 1867

[29] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[30] NIGH TH, 1976, PHYS REV B, V14, P2528

[21] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[22] Kopylov A. A., 1975, Soviet Physics - Solid State, V16, P1200

[23] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499

[24] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[25] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[26] LANG DV, 1976, SEP P INT C RAD EFF

[27] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[28] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 1859 - 1867

[29] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[30] NIGH TH, 1976, PHYS REV B, V14, P2528