JUNCTION TEMPERATURES UNDER BREAKDOWN CONDITION

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[3] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] TEMPERATURE COEFFICIENT OF BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) : 513 - &

[6] MATSUMURA M, IN PRESS

[7] MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 580 - +

[8] COMPOSITE AVALANCHE DIODE STRUCTURES FOR INCREASED POWER CAPABILITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 584 - +

[9] UNIT-CUBE EXPRESSION FOR SPACE-CHARGE RESISTANCE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (05): : 837 - +

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[3] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] TEMPERATURE COEFFICIENT OF BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) : 513 - &

[6] MATSUMURA M, IN PRESS

[7] MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 580 - +

[8] COMPOSITE AVALANCHE DIODE STRUCTURES FOR INCREASED POWER CAPABILITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 584 - +

[9] UNIT-CUBE EXPRESSION FOR SPACE-CHARGE RESISTANCE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (05): : 837 - +