CHANGE IN THE PROBABILITY OF NON-RADIATIVE (AUGER) ELECTRONIC-TRANSITIONS IN DEEP RADIATIVE CENTERS CAUSED BY HEAT-TREATMENT, GAMMA-IRRADIATION, AND DEFORMATION OF GAAS

被引：5

作者：

GLINCHUK, KD

LUKAT, K

PROKHOROVICH, AV

VOVNENKO, VI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 57卷 / 01期

关键词：

D O I：

10.1002/pssa.2210570115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 154

页数：6

共 15 条

[1] CHARACTERISTICS OF COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :339-345

[2] INTERNAL RADIATIVE EFFICIENCY AND MECHANISM OF TEMPERATURE QUENCHING OF 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02) :777-786

[3] ROLE OF DIFFERENT LOCAL CENTERS IN DETERMINATION OF CONCENTRATION-DEPENDENCE OF INTRINSIC EMISSION INTENSITY IN N-TYPE GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02) :K91-K94

[4] SCHEME OF ELECTRONIC-TRANSITIONS VIA 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

RODIONOV, VE ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :659-668

[5] STUDY OF NONLINEAR EXTRINSIC LUMINESCENCE IN GAAS .3. SUBLINEAR EMISSION DUE TO AUGER TRANSITIONS IN RADIATIVE CENTERS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (01) :121-128

[6] STUDY OF NONLINEAR EXTRINSIC LUMINESCENCE IN GAAS .2. ROLE OF AUGER RECOMBINATION [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02) :645-655

[7] EFFECT OF 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS ON INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02) :777-785

[8]

HALL TH, 1968, DEFORMATION SOLIDS

[9]

Lang D. V., 1977, International Conference on Radiation Effects in Semiconductors, P70

[10]

LANG DV, 1977, RAD EFFECTS SEMICOND, P70

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