SELECTIVE SILICON EPITAXIAL-GROWTH BY LPCVD USING SILANE

被引：9

作者：

PARKER, GJ

STARBUCK, CMK

机构：

[1] Department of Electronics and Computer Science, The University of Southampton, Highfield, Southampto, 331 Newman Springs Rd. Red Bank

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Epitaxy and epitaxial growth; Semiconductor devices and materials;

D O I：

10.1049/el:19900545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective epitaxy Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0-7 /«n thickness showing excellent uniformity and selectivity without the use of HC1 are presented. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：831 / 832

页数：2

共 10 条

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