DETERMINATION OF SURFACE-STATES DISTRIBUTION IN A-SI-H USING MOS TUNNEL-JUNCTIONS

被引：3

作者：

BALBERG, I ^{[1
]}

机构：

[1] RCA, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 04期

关键词：

D O I：

10.1007/BF02652897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：797 / 818

页数：22

相关论文

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[8] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS
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