DIFFUSION OF GE IN GAAS AT SIO2-ENCAPSULATED GE-GAAS INTERFACES

被引：7

作者：

KAVANAGH, KL ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期

关键词：

D O I：

10.1139/p87-157

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：987 / 990

页数：4

共 13 条

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J].

ARNOLD, N ;

SCHMITT, R ;

HEIME, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) :443-+

[2] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J].

CHAKRAVERTY, BK ;

DREYFUS, RW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :631-+

[3] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[4] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[5]

GREINER ME, 1984, THESIS STANFORD U ST

[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[7] THE POLYCRYSTALLINE-SI CONTACT TO GAAS [J].

KAVANAGH, KL ;

MAYER, JW ;

MAGEE, CW ;

SHEETS, J ;

TONG, J ;

KIRCHNER, PD ;

WOODALL, JM ;

HALLER, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1176-1179

[8] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J].

KUECH, TF ;

VEUHOFF, E .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :148-156

[9] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J].

KUZUHARA, M ;

KOHZU, H .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :527-529

[10]

LAVRISHCHEV TT, 1971, IAN SSSR NEORG MATER, V7, P310

← 1 2 →