RETARDED DIFFUSION OF GALLIUM IN SILICON .2.

被引：7

作者：

OKAMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 10期

关键词：

D O I：

10.1143/JJAP.7.1231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1231 / &

共 23 条

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[4]

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