ELECTRICAL-PROPERTIES OF ULTRALARGE GRAIN POLYCRYSTALLINE SILICON FILM PRODUCED BY EXCIMER-LASER RECRYSTALLIZATION METHOD

被引：6

作者：

CHOI, DH

IMAI, S

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, O-okyama Meguroku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2A期

关键词：

POLY-SI TFT; GRAIN BOUNDARY TERMINATION; BULK; ACTIVATION ENERGY; DENSITY OF DEFECT STATES; VACUUM; MOLECULAR HYDROGEN AND ATOMIC HYDROGEN ANNEALING;

D O I：

10.1143/JJAP.34.459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties have been evaluated for polysilicon films from temperature dependence of the field-effect mobility. Density of the defect states at the grain boundary (GB) could be calculated as a function of energy for vacuum-, molecuiar-hydrogen- and atomic-hydrogen-annealed films. Defect states were distributed strongly near 0.14 eV below the conduction band and decreased steeply with more closer to the mid-gap. The GB was found to have no serious effect on electron and hole transport characteristics after hydrogenation.

引用

页码：459 / 463

页数：5

共 11 条

[1]

AHN BC, 1991, JPN J APPL PHYS, V30, P3696

[2] DRASTIC ENLARGEMENT OF GRAIN-SIZE OF EXCIMER-LASER-CRYSTALLIZED POLYSILICON FILMS [J].

CHOI, DH ;

SHIMIZU, K ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4545-4549

[3] THE ANNEALING EFFECTS OF EXCIMER-LASER-PRODUCED LARGE-GRAIN POLY-SI THIN-FILM TRANSISTORS [J].

CHOI, DH ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (1B) :L83-L86

[4] LATERAL GROWTH OF POLY-SI FILM BY EXCIMER-LASER AND ITS THIN-FILM-TRANSISTOR APPLICATION [J].

CHOI, DH ;

SADAYUKI, E ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :70-74

[5] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :933-940

[6] 2-DIMENSIONAL IMPURITY STATES IN AN N-TYPE INVERSION LAYER OF SILICON [J].

KOTERA, N ;

YOSHIDA, I ;

KATAYAMA, Y ;

KOMATSUBARA, KF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (02) :754-+

[7] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

LEISTIKO, O ;

GROVE, AS ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) :248-+

[8] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[9] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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