PHOTOLUMINESCENCE STUDIES OF THE EL2 DEFECT IN GALLIUM-ARSENIDE UNDER EXTERNAL PERTURBATIONS

被引：41

作者：

NISSEN, MK

VILLEMAIRE, A

THEWALT, MLW

机构：

[1] Department of Physics, Simon Fraser University, Burnaby

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.67.112

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full T(d) symmetry and hence support the isolated-arsenic-antisite model of EL2. Measurements of both the shift due to the hydrostatic component of the stress as well as the g factor of the final state of the transition confirm the identification of this photoluminescence with EL2.

引用

页码：112 / 115

页数：4

共 23 条

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