PHOTOLUMINESCENCE STUDIES OF THE EL2 DEFECT IN GALLIUM-ARSENIDE UNDER EXTERNAL PERTURBATIONS

被引:41
作者
NISSEN, MK
VILLEMAIRE, A
THEWALT, MLW
机构
[1] Department of Physics, Simon Fraser University, Burnaby
关键词
D O I
10.1103/PhysRevLett.67.112
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full T(d) symmetry and hence support the isolated-arsenic-antisite model of EL2. Measurements of both the shift due to the hydrostatic component of the stress as well as the g factor of the final state of the transition confirm the identification of this photoluminescence with EL2.
引用
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页码:112 / 115
页数:4
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