A DETAILED ANALYSIS ON DONORS IN TE-DOPED GA1-XALXAS ALLOYS NEAR ENERGY-BAND CROSSOVER POINTS

被引：8

作者：

LEE, HJ

CHOI, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

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D O I：

10.1063/1.341742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1906 / 1909

页数：4

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