TIME-OF-FLIGHT AND SURFACE RESIDENCE TIME MEASUREMENTS FOR ION-ENHANCED SI-CL2 REACTION-PRODUCTS

被引：43

作者：

ROSSEN, RA ^{[1
]}

SAWIN, HH ^{[1
]}

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574570

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1595 / 1599

页数：5

共 12 条

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