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STUDIES OF H-2+ IMPLANTATION INTO INDIUM TIN OXIDE-FILMS

被引：4
作者：
SERIKAWA, T
SHIRAI, S
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷
关键词：
D O I：
10.1016/0168-583X(89)90286-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：732 / 734
页数：3
相关论文
共 6 条
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[3]   BAND-GAP ENERGY AND URBACH TAIL STUDIES OF AMORPHOUS, PARTIALLY CRYSTALLINE AND POLYCRYSTALLINE TIN DIOXIDE [J].
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[4]   PREPARATION AND CHARACTERIZATION OF RF SPUTTERED INDIUM TIN OXIDE-FILMS [J].
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JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :384-392
[5]   THE GROWTH AND STRUCTURE OF RF SPUTTERED INDIUM TIN OXIDE THIN-FILMS [J].
SREENIVAS, K ;
MANSINGH, A .
APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :670-680
[6]  
STEKL AJ, 1980, J APPL PHYS, V51, P3890
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